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Lineshape measurement of semiconductor lasers below threshold

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1 Author(s)
Kikuchi, K. ; Dept. of Electron. Eng., Tokyo Univ., Japan

A novel heterodyne method for measuring the linewidth ranging from 100 MHz to 100 GHz is developed. The line shape of 1.3-μm DFB (distributed-feedback) lasers biased below threshold is measured by the use of this method. The center-frequency shift and the linewidth are determined as functions of the bias current, showing linear dependencies on the bias current. From this result, the linewidth enhancement factor is estimated

Published in:

Quantum Electronics, IEEE Journal of  (Volume:24 ,  Issue: 9 )