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AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n+ re-growth

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8 Author(s)
Wu, Y.‐F. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Kapolnek, D. ; Kozodoy, P. ; Thibeault, B.
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n+ regrown source-drain regions have been used for AlGaN/GaN MODFETs to obtain a low-resistance ohmic contact and clear-cut ohmic boundaries which will potentially facilitate fabrication of deep submicron-gate devices. The process consists: 1. Formation of the SiO 2 re-growth mask by E-beam evaporation and lift-off; 2. Removal of the AlGaN layer in the ohmic region by RIE; 3. n+ GaN re-growth in the MOCVD reactor; 4. Ohmic metal deposition and annealing. A transfer ohmic contact resistance of 0.44 Ω-mm was achieved. Much improved device performance was obtained with the new ohmic scheme over the conventional scheme with the same metalisation

Published in:

Compound Semiconductors, 1997 IEEE International Symposium on

Date of Conference:

8-11 Sep 1997