Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). We apologize for the inconvenience.
By Topic

Whole wafer characterization of large size GaAs-AlGaAs semiconductor materials prepared by MOCVD TurboDiscTM technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Feng, Z.C. ; EMCORE Corp., Somerset, NJ, USA ; Armour, E. ; Thompson, A.G. ; Stall, R.A.

GaAs-AlGaAs III-V compound semiconductor materials and structures have many applications for electronic and optoelectronic devices. Large diameter wafers from epitaxial growth of these materials with high quality and high uniformity are in great demand. Non-destructive and whole wafer characterizations are very necessary for these materials in mass production industry environment. In this study, we demonstrate the low pressure MOCVD growth and non-destructive materials characterization on 100 mm (4") diameter wafer epitaxial films of GaAs, AlGaAs, and quantum well structures. A series of mapping distributions of the film thickness, sheet resistivity, and PL spectra within a run and run to run are illustrated. Uniformities of our epitaxial film thickness, sheet resistivity, major PL band peak wavelength and width are better than 1-4%, characteristic of the grown materials with high crystalline quality and uniformity. These wafer scale material characterizations were tightly coupled with the epitaxial growth processes for the optimization of growth and processing parameters

Published in:

Compound Semiconductors, 1997 IEEE International Symposium on

Date of Conference:

8-11 Sep 1997