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Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

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6 Author(s)
R. D. Dupuis ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; P. A. Grudowski ; C. J. Eiting ; I. C. Shmagin
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We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. These structures consist of InxGa1-xN quantum wells and InyGa1-yN barrier layers with GaN or AlGaN cladding layers. A comparison of the 300 K photoluminescence spectra of these samples indicates that the emission from the quantum well structure is not strongly affected by the high-temperature overlayer growth of GaN or AlGaN films. X-ray diffraction scans show superlattice peaks and indicate that the MQWs are fully strained

Published in:

Compound Semiconductors, 1997 IEEE International Symposium on

Date of Conference:

8-11 Sep 1997