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Ordered incorporation of dopants in GaAs: a new route to overcome solubility limits

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4 Author(s)
Daweritz, L. ; Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany ; Schutzendube, P. ; Reiche, M. ; Ploog, K.H.

An analysis of atomic configurations during Si incorporation in GaAs by MBE has been performed using RHEED and reflectance difference spectroscopy (RDS). It provides a direct explanation for the different findings of the maximum sheet electron concentration in Si-delta doped GaAs reported in literature

Published in:

Compound Semiconductors, 1997 IEEE International Symposium on

Date of Conference:

8-11 Sep 1997