Fabrication of InGaAs quantum wire structures by As/sub 2/ flux in molecular beam epitaxy

InGaAs/InAlAs quantum wire structures on V-grooved substrates have been fabricated under As/sub 2/ flux by molecular beam epitaxy. Under As/sub 2/ flux, a smaller number of In atoms migrate than those under As/sub 4/ flux to the V-groove bottom from the sidewall surface. The InAlAs layer on the V-grooved InP substrates grown under As/sub 2/ flux preserves the V-shape, whereas the V-shape cannot be preserved and the quantum wire structures cannot be fabricated under As/sub 2/ flux. The InGaAs quantum wires grown under As/sub 2/ flux have good optical property.