By Topic

Fabrication of InGaAs quantum wire structures by As2 flux in molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sugaya, T. ; Electrotech. Lab., Tsukuba, Japan ; Tanuma, Y. ; Nakagawa, T. ; Sugiyama, Y.
more authors

InGaAs/InAlAs quantum wire structures on V-grooved substrates have been fabricated under As2 flux by molecular beam epitaxy. Under As2 flux, a smaller number of In atoms migrate than those under As4 flux to the V-groove bottom from the sidewall surface. The InAlAs layer on the V-grooved InP substrates grown under As 2 flux preserves the V-shape, whereas the V-shape cannot be preserved and the quantum wire structures cannot be fabricated under As 2 flux. The InGaAs quantum wires grown under As2 flux have good optical property

Published in:

Compound Semiconductors, 1997 IEEE International Symposium on

Date of Conference:

8-11 Sep 1997