Cart (Loading....) | Create Account
Close category search window
 

Analysis of intrinsic small signal parameters in HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Abdel Aziz, M. ; Air Defence Coll., Egypt ; Banna, M.E. ; Elsayed, M.

A charge control model was developed which is based on a single analytical function that describes the dependence of the three charges in HEMTs on gate voltage. These charges include: 2DEG, AlGaAs free electrons and neutralized donors. Closed form expressions for the intrinsic small signal model parameters in linear and saturation regions were derived. The contributions of both the AlGaAs and neutralized donor charges, which were commonly ignored in early models, were studied at different gate and drain bias voltages

Published in:

Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National

Date of Conference:

24-26 Feb 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.