By Topic

Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
El-Saba, M.H. ; Fac. of Eng., Ain Shams Univ., Cairo, Egypt

In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results

Published in:

Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National

Date of Conference:

24-26 Feb 1998