Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices

In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results.