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A novel thin film transistor using double amorphous silicon active layer

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4 Author(s)
Choi, Jong Hyun ; Dept. of Phys., Kyung Hee Univ., Seoul, South Korea ; Kim, Chang Soo ; Byung Cheon Lim ; Jin Jang

We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT

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Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 9 )