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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:45 Issue:9 Help

A novel thin film transistor using double amorphous silicon active layer

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4 Author(s)
Choi, Jong Hyun ; Dept. of Phys., Kyung Hee Univ., Seoul, South Korea ; Kim, Chang Soo ; Byung Cheon Lim ; Jin Jang

We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT

Published in:
Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 9 )

Date of Publication: Sep 1998

Page(s):
2074 - 2076
ISSN :
0018-9383
INSPEC Accession Number:
6018544
Digital Object Identifier :
10.1109/16.711377
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Sep 1998
Sponsored by :
IEEE Electron Devices Society

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