By Topic

Investigation on electron and hole transport properties using the full-band spherical-harmonics expansion method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
S. Reggiani ; Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy ; M. C. Vecchi ; M. Rudan

The full-band spherical-harmonics solution of the Boltzmann transport equation in silicon is achieved for both the conduction and valence band. The relevant scattering mechanisms (impact ionization, acoustic and optical phonons, ionized impurities) are modeled consistently. Comparison with Monte Carlo carrier-distribution functions at different electric fields emphasize the importance of a correct description of the band structure and scattering rates. The acoustic-phonon model is improved, the models of multiple collisions and impurity clustering, and the partial ionization of impurities are introduced. Comparison with experimental mobility data shows agreement over a wide range of temperatures and doping concentrations

Published in:

IEEE Transactions on Electron Devices  (Volume:45 ,  Issue: 9 )