Referenced Items are not available for this document.
Porous Si layers up to 250 μm in thickness are used to isolate spiral inductors from low resistivity substrates. Wafer curvature and secondary ion mass spectroscopy (SIMS) analysis are done to address the manufacturability issue of porous Si. Spiral inductors with a single level Al on 2 in, p-type substrates of 0.008 Ω-cm resistivity are demonstrated with Q<6 at 3 GHz for an L of ~8 nH. Large inductors with L~100 nH have been shown with the first resonance frequency at 1 GHz. The expected performance potential as well as factors that could be limiting the Q are discussed
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:33
,
Issue:
9
)
Date of Publication: Sep 1998
- Page(s):
- 1433 - 1438
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 6030014
- Digital Object Identifier :
- 10.1109/4.711344
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 1998
- Sponsored by :
- IEEE Solid-State Circuits Society
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