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Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting

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5 Author(s)

A novel base ballasting scheme for interdigitated power RF bipolar transistors has demonstrated improved performance and thermal stability. The nonlinear ballast resistor in series with each base finger is implemented using a depletion-mode FET, which requires only minor modification in the fabrication process. Mixed-mode simulation, instead of analytical equations, is used for more accurate device characterization

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Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 9 )