By Topic

Output power characteristics of cooled power PHEMT MMICs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sokolov, V. ; TLC Precision Wafer Technol. Inc., Minneapolis, MN, USA ; Childs, T. ; Dwarkin, R. ; Cheung, P.

Saturated power output characteristics of monolithic microwave (and mm-wave) integrated circuit (MMIC) power amplifiers incorporating double heterojunction InGaAs-channel PHEMTs (pseudomorphic high electron mobility transistors) operating at different base plate temperatures are compared. While it is generally expected that ideal PHEMTs have greater output power at lower temperatures, it is shown experimentally that this is not always the case. Indeed, the saturated output power does not necessarily follow the same trends with temperature as the corresponding small signal gain characteristics. In some cases the saturated output power is less at lower temperatures despite and increase in the corresponding small signal gain. Furthermore, the same monolithic circuit design may behave differently with temperature depending on the specific PHEMT wafer from which it was fabricated. Guidelines are presented for the selection of suitable PHEMT epitaxial material for increasing saturated output power at lower temperatures

Published in:

Aerospace and Electronics Conference, 1998. NAECON 1998. Proceedings of the IEEE 1998 National

Date of Conference:

13-17 Jul 1998