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Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films

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5 Author(s)
Giust, G.K. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Sigmon, T.W. ; Carey, P.M. ; Weiss, B.
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In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, we report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300/spl deg/C, and produces devices with mobilities up to 450 cm/sup 2//Vs, on/off current ratios greater than 10/sup 7/, without using a post-hydrogenation step. We believe these results represent the highest performance TFT's to date fabricated from sputtered silicon films.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 9 )