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Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs

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8 Author(s)
Gong-Ru Lin ; Inst. of Electro-Opt. Eng., Tatung Inst. of Technol., Taipei, Taiwan ; Chen, Wen-Chung ; Chang, C.-S. ; Shyh-Chin Chao
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Structural, electrical, and ultrafast optical properties of furnace-annealed arsenic-ion-implanted GaAs (GaAs:As+) has been investigated for its applications in ultrafast optoelectronics. From these studies, we determine that GaAs substrates implanted with 200-keV arsenic ions at 1010 ions/cm2 and furnace-annealed at 500°C-600°C would have recovered its crystallinity, be highly resistive, and exhibit picosecond photo-excited carrier lifetimes. The duration of the electrical pulses generated by photoconductive switches (PCSs) fabricated on the optimized material was ≈4 ps. The risetime (10%-90%) and l/e falltime were, respectively, ≈2 and 3 ps. These results were measurement-system limited. We estimated the actual response to be ≈2 ps, consistent with a photo-excited carrier lifetime of ≈1.8 ps. The peak responsivity was ⩾4×10-3 A/W. The dark current for the GaAs:As+ PCS biased at 40 V was as low as 5 nA. The breakdown field was higher than 150 kV/cm. These characteristics are comparable to those of state-of-the-art photoconductors such as LT-GaAs

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Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 9 )