By Topic

Strained InGaAs-GaAs single-quantum-well lasers coupled to n-type δ-doping-improved static and dynamic performance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Buchinsky, O. ; Dept. of Phys. & Solid State Inst., Technion-Israel Inst. of Technol., Haifa, Israel ; Blumin, Marina ; Orenstein, M. ; Eisenstein, G.
more authors

A new concept for improving the performance of quantum-well (QW) lasers is reported. The enhancement, both in static and dynamic characteristics, was accomplished by the use of Te n-type δ-doping, coupled to a single strained InGaAs-GaAs QW. The internal parameters were investigated, and their enhancement origin is revealed. It is shown to be mainly a consequence of the higher carrier population in the QW and due to the strong coupling between the QW and the δ-doping well

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 9 )