Strained InGaAs-GaAs single-quantum-well lasers coupled to n-type /spl delta/-doping-improved static and dynamic performance

A new concept for improving the performance of quantum-well (QW) lasers is reported. The enhancement, both in static and dynamic characteristics, was accomplished by the use of Te n-type /spl delta/-doping, coupled to a single strained InGaAs-GaAs QW. The internal parameters were investigated, and their enhancement origin is revealed. It is shown to be mainly a consequence of the higher carrier population in the QW and due to the strong coupling between the QW and the /spl delta/-doping well.