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Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers

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4 Author(s)
Higashi, T. ; Opt. Semicond. Device Lab., Fujitsu Labs. Ltd., Atsugi, Japan ; Yamamoto, Tsuyoshi ; Ogita, S. ; Kobayashi, M.

We experimentally evaluated the temperature dependence of the oscillation wavelength in 1.3-μm GaInAsP-InP strained multiple-quantum-well (MQW) semiconductor lasers compared to bulk lasers. The temperature dependence of the oscillation wavelength can be characterized by two newly introduced coefficients α1 and α2 which are the gain peak wavelength shift coefficients under the constant current condition and under the constant temperature condition, respectively. These two coefficients of various MQW structure lasers are the same as those of bulk lasers. This result means that the oscillation wavelength shift coefficient dλ/dT is only a function of the characteristic temperature T0. The higher T0 induces the large temperature dependence of the oscillation wavelength, When the characteristic temperature T0 is equal to the characteristic temperature Tltr of the transparency current Itr, the oscillation wavelength shift coefficient dλ/dT takes the maximum value which is determined by the thermally induced bandgap narrowing effect dλ g/dT. One possibility to solve the paradox between a high characteristic temperature T0 and the small temperature dependence of the oscillation wavelength is the introduction of the temperature-independent leakage current

Published in:

Quantum Electronics, IEEE Journal of  (Volume:34 ,  Issue: 9 )

Date of Publication:

Sep 1998

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