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A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET

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2 Author(s)
Winton, R.S. ; Dept. of Electr. Eng., Mississippi State Univ., MS, USA ; Bandy, W.R.

A charge/capacitance model of a simple form that is continuous across the linear and saturation regimes is developed. The model is based on a conductance analysis of the MOSFET which incorporates velocity saturation at a first-principles level. By relating charge layers within the device to characteristics of the conductance, the charge model not only is able to characterize C-V behavior but to also incorporate velocity saturation. Since the basic conductance form is a hyperbola, the model is mathematically simple and robust and yields MOSFET capacitances and charges which are continuous and of infinite differentiability over the linear and saturation regimes of device operation

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:17 ,  Issue: 7 )

Date of Publication:

Jul 1998

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