By Topic

A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
R. S. Winton ; Dept. of Electr. Eng., Mississippi State Univ., MS, USA ; W. R. Bandy

A charge/capacitance model of a simple form that is continuous across the linear and saturation regimes is developed. The model is based on a conductance analysis of the MOSFET which incorporates velocity saturation at a first-principles level. By relating charge layers within the device to characteristics of the conductance, the charge model not only is able to characterize C-V behavior but to also incorporate velocity saturation. Since the basic conductance form is a hyperbola, the model is mathematically simple and robust and yields MOSFET capacitances and charges which are continuous and of infinite differentiability over the linear and saturation regimes of device operation

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:17 ,  Issue: 7 )