Cart (Loading....) | Create Account
Close category search window

On the role of the interface with the substrate in the destructive dielectric breakdown of very thin insulating films grown on silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Novkovski, N. ; Phys. Dept., Fac. of Sci., Skopje, Macedonia

In this paper we treat the connection between the insulator-silicon interface properties and the breakdown. Previously, we showed that there exists striking correlation between the generation of interface traps during the high-field stress and the charge to breakdown in a variety of oxynitride films prepared by RTP. Here we elaborate this question in more detail. This correlation being much stronger that the correlation of the breakdown with the field variations induced with charge trapping, indicates that the degradation leading to the breakdown is most probably insulator-silicon interface degradation itself rather then a direct field induced mechanism or hole trapping at the cathode of injection

Published in:

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Date of Conference:

22-25 Jun 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.