Referenced Items are not available for this document.
Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented
Published in:
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Date of Conference: 22-25 Jun 1998
- Page(s):
- 368 - 371
- Meeting Date :
- 22 Jun 1998-25 Jun 1998
- Print ISBN:
- 0-7803-4237-2
- INSPEC Accession Number:
- 6154550
- Conference Location :
- Vasteras
- Digital Object Identifier :
- 10.1109/ICSD.1998.709302
- Product Type:
- Conference Publications
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