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Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

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5 Author(s)
Kato, Hiromitsu ; Dept. of Electr. & Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan ; Sakai, S. ; Takami, A. ; Ohki, Y.
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Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented

Published in:

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Date of Conference:

22-25 Jun 1998