By Topic

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Blood, P. ; Philips Res. Labs., Redhill, UK ; Colak, S. ; Kucharska, A.I.

Gain spectra and gain-current relations are calculated for GaAs-AlGaAs quantum-well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transition broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum-well lasers.<>

Published in:

Quantum Electronics, IEEE Journal of  (Volume:24 ,  Issue: 8 )