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A high speed and low power SOI inverter using active body-bias

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4 Author(s)
Joonho Gil ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea ; Minkyu Je ; Jongho Lee ; Hyungcheol Shin

We propose a new high speed and low power SOI inverter that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5 V, the proposed circuit operates 27% faster than the conventional SOI circuit with the same power dissipation.

Published in:

Low Power Electronics and Design, 1998. Proceedings. 1998 International Symposium on

Date of Conference:

10-12 Aug. 1998