Referenced Items are not available for this document.
Semiconductor laser amplifiers are investigated with respect to amplified spontaneous emission power and gain characteristics. The influence of the spontaneous emission coefficient, input power, and facet reflectivity on amplifier saturation characteristics is analyzed. It is shown that a small β, zero reflectance device has advantageous properties in terms of high gain and output power at the 3-dB compression point. The low reflectance contributes to a slow saturation, whereas a low β means a larger optical model and hence lower intensities and less saturation for a given output power or gain
Published in:
Quantum Electronics, IEEE Journal of
(Volume:24
,
Issue:
8
)
Date of Publication: Aug 1988
- Page(s):
- 1532 - 1537
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 3291337
- Digital Object Identifier :
- 10.1109/3.7080
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug 1988
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
