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Hybrid integration of GaAs pin-photodiodes with CMOS transimpedance amplifier circuits

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5 Author(s)
T. Nakahara ; NTT Opto-Electron. Labs., Kanagawa, Japan ; H. Tsuda ; K. Tateno ; S. Matsuo
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GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polymide bonding. The capacitance of the integrated photodiode was 50 fF, which included almost no parasitic. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800 Mbit/s

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )