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3.3 V, 50 Mbit/s one-chip Si-bipolar transceiver LSI for optical burst-mode communications

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3 Author(s)
Ishihara, N. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Nakamura, M. ; Akazawa, Y.

A 3.3 V, 50 Mbit/s one-chip transceiver LSI fabricated by a 4 GHz Si-bipolar process includes an adjustment-free instantaneous response receiver and a laser-diode (LD) driver to build a low-cost optical interface module for FTTD systems. The LSI, assembled with a conventional 0.8 A/W photodiode and 0.2 W/A LD, has an input optical receiver range of -37.8 to 17.0 dBm and an optical average output power of +6 dBm

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )