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Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz

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1 Author(s)
Eisele, H. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

GaAs TUNNETT diodes on diamond heat sinks yielded state-of-the-art RF power levels of 9 and >4 mW with corresponding DC-to-RF conversion efficiencies of >1.0 and >0.6% in a second-harmonic mode at 209 and 235 GHz, respectively. The phase noise was well below -94 dBc/Hz at a carrier frequency of 500 kHz. Simulations revealed a varactor-like mode of operation

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )