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InP-based 1.5 μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

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7 Author(s)
Gebretsadik, H. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Bhattacharya, P.K. ; Kamath, K.K. ; Qasaimeh, O.R.
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Room temperature pulsed operation of a novel 1.5 μm vertical cavity surface emitting laser is reported. A GaAs-Al0.95Ga 0.05As heterostructure is grown directly on the patterned InGaAsP-InP quantum well active region. Selective lateral oxidation of a lattice matched In0.52Al0.48As layer is used for current confinement and, to create the top AlxOy-GaAs distributed Bragg reflector. The minimum threshold current is 12 mA

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )