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Improvement of GaN-based laser diode facets by FIB polishing

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10 Author(s)
Mack, M.P. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Via, G.D. ; Abare, A.C. ; Hansen, M.
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420 nm metal organic chemical vapour deposition-grown laser diodes were fabricated using Cl2 reactive ion etching to form the facet mirrors. The diodes were subsequently tested under pulsed conditions before and after focused ion beam (FIB) polishing. Ith was reduced from 1.75 to 1.08 A and the differential quantum efficiency (ηd) increased from 1.3% to 2.5% after FIS

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )