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980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

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6 Author(s)
Yang, G.W. ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Xu, Z.T. ; Ma, X.Y. ; Xu, J.Y.
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The authors report on the fabrication of 980 nm InGaAs strained quantum well lasers with hybrid materials of InGaAsP as waveguide and AlGaAs as cladding grown by metal organic chemical vapour deposition. The InGaAs-InGaAsP-AlGaAs diode lasers (100×800 μm) with broadened waveguide structure exhibit a threshold current of 180 mA, a slope efficiency of 1.0 W/A, and a high characteristic temperature coefficient (T0) of 230 K

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )

Date of Publication:

25 Jun 1998

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