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Integration of low permittivity dielectric in Al dual damascene architecture for low parasitic on-chip interconnect applications

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13 Author(s)
Zhao, B. ; Semicond. Syst., Rockwell Int. Corp., Newport Beach, CA, USA ; Feiler, D. ; Liu, Q.Z. ; Nguyen, C.H.
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A low dielectric constant (low-κ) material has been successfully integrated in an Al dual damascene interconnect architecture where the low-κ dielectric (κ<3) was used as the intra/inter level dielectric (ILD). In addition to a reduction in intra-level and inter-level capacitance, low via resistance, excellent electrical isolation, and good reliability characteristics were observed

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )

Date of Publication:

25 Jun 1998

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