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EEPROM transistor fabricated with stacked SiOx LPCVD films

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3 Author(s)
W. Calleja ; Dept. de Electron., INAOE, Puebla, Mexico ; M. Aceves ; C. Falcony

The key fabrication steps and the write/erase characteristics of a new memory metal-insulator-silicon transistor are presented. The memory cell is composed of a single silicon gate and a stacked SiOx LPCVD film as an active memory film. With this new arrangement, the memory device shows excellent endurance

Published in:

Electronics Letters  (Volume:34 ,  Issue: 13 )