Referenced Items are not available for this document.
The key fabrication steps and the write/erase characteristics of a new memory metal-insulator-silicon transistor are presented. The memory cell is composed of a single silicon gate and a stacked SiOx LPCVD film as an active memory film. With this new arrangement, the memory device shows excellent endurance
Published in:
Electronics Letters
(Volume:34
,
Issue:
13
)
Date of Publication: 25 Jun 1998
- Page(s):
- 1294 - 1296
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5968077
- Digital Object Identifier :
- 10.1049/el:19980939
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 25 Jun 1998
- Sponsored by :
- Institution of Engineering and Technology
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
