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Submilliampere threshold current in 1.3 μm InAsP n-type modulation doped MQW lasers grown by gas source molecular beam epitaxy

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6 Author(s)
H. Shimizu ; Furukawa Electr. Co. Ltd., Yokohama, Japan ; K. Kumada ; N. Yamanaka ; N. Iwai
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A very low CW threshold current of 0.9 mA has been obtained in a 1.3 μm InAsP n-type modulation doped MQW laser at room temperature. This is the lowest threshold current ever reported for long-wavelength lasers using n-type modulation doping, and the lowest result grown by gas source molecular beam epitaxy in the long wavelength region

Published in:

Electronics Letters  (Volume:34 ,  Issue: 16 )