By Topic

Optimum design for a two-stage CMOS I/O ESD protection circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Tong Li ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; P. Bendix ; D. Suh ; Y. J. Huh
more authors

In industry, the design of CMOS ESD (electrostatic discharge) protection devices and circuits has been approached empirically. In this work, we propose an optimization methodology for a typical two-stage CMOS I/O protection circuit based on simulation. We have identified two kinds of design, namely resistor-limited and NMOS-limited, and demonstrated that the isolation resistor design is the key to the circuit's protection level and performance

Published in:

Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on  (Volume:2 )

Date of Conference:

31 May-3 Jun 1998