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Spin-valves with bias compensation layer

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4 Author(s)
Kanai, H. ; File Memory Lab., Fujitsu Labs. Ltd., Atsugi, Japan ; Yamada, K. ; Kanamine, M. ; Toda, J.

We successfully used a bias compensation layer (BCL) for an improved bias state and asymmetry in spin-valves having a structure of Ta/NiFe/Pd32Pt17Mn/CoFeB2/Cu/CoFeB 2/NiFe/Ta/BCL/Ta. The shift of an MR response curve from a zero field is almost zero regardless of the polarity and magnitude of the sense current in an unshielded spin-valve element. Inductive/spin-valve heads were fabricated having trimmed high-Bs electroplated Ni45Fe55 top poles and a Ta(50 Å)/NiFe(20 Å)/PdPtMn(200 Å)/CoFeB(20 Å)/Cu(28 Å)/CoFeB(25 Å)/NiFe(20 Å)/Ta(100 Å)/NiFe(30 Å)/Ta spin-valve film. Their read/write performance was tested on a CoCr19Pt5Ta2Nb2 thin-film disk. The dependence of sense current on the asymmetry was small. Narrow, effective write and read track widths of 0.85 μm and 0.62 μm were measured, an output of 660 μVpp and D50 of 200 kFCI were obtained

Published in:

Magnetics, IEEE Transactions on  (Volume:34 ,  Issue: 4 )