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Magnetostriction constants of (110) oriented epitaxially grown FeTaN thin films

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4 Author(s)
Varga, L. ; Dept. of Phys. & Astron., Alabama Univ., Tuscaloosa, AL, USA ; Jiang, H. ; Klemmer, T.J. ; Doyle, W.D.

The magnetostriction constants, λ100 and λ111, of FeTaN (10 wt% Ta) were determined in (110) oriented epitaxial thin films (~1500 W) deposited by dc magnetron sputtering onto Cu(001) buffer layers (~2000 Å) which were grown on Si(001) single crystal substrates. The orientation relationship of the films was FeTaN(110)||Cu(001)||Si(001) with FeTaN<111>||Cu<110>||Si<100>, which was satisfied by four different, equally probable in-plane orientations of the crystallites. The magnetostriction measurement was carried out on a cantilever beam measurement system calibrated with (110) oriented epitaxial Fe films with the same morphology as the unknown films assuming the bulk values of λ100, and λ111 . The magnetostriction of FeTaN films was measured as a function of angle in the sample plane and fitted with the calculated average of the four orientations. In conflict with theoretical predictions, it was found that λ100 decreases and λ111 increases as a function of lattice dilation which was taken to be proportional to the interstitial concentration. At larger normalized lattice dilation, ~2%, λ111 changed sign from negative to positive. The calculated saturation magnetostriction, λs , using these values of λ100, and λ111 agreed with published data on nanocrystalline samples of the same composition with no additional assumptions

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Magnetics, IEEE Transactions on  (Volume:34 ,  Issue: 4 )