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Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition

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2 Author(s)
Sato, S. ; Gen. Electron. Res & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan ; Satoh, S.

A strained GaInNAs/GaAs double quantum-well laser is developed by metal organic chemical vapour deposition. Almost 1.2 μm at room-temperature under pulsed operation is demonstrated. The threshold current density is lower than that of a laser with a GaInNAs bulk active layer

Published in:

Electronics Letters  (Volume:34 ,  Issue: 15 )