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Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

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8 Author(s)
T. Kobayashi ; Res. Center, Sony Corp., Yokohama, Japan ; F. Nakamura ; K. Naganuma ; T. Tojyo
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Continuous-wave operation at room temperature was demonstrated in a GaInN/GaN multiquantum well (MQW) laser grown by metal organic chemical vapour deposition (MOCVD) using a horizontal reactor. The laser structure was grown on a (0001) c-plane sapphire substrate. A 1 mm long cavity with a 4 μm wide ridge stripe was formed by cleaving along the (11-20) plane of the GaInNiGaN epitaxial layers. Stimulated emission was observed at a wavelength of 411 nm with a threshold current density of 11.7 kA/cm2

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Electronics Letters  (Volume:34 ,  Issue: 15 )