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Measured results on bandgap reference in SiGe BiCMOS

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2 Author(s)
H. A. Ainspan ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; C. S. Webster

The measured temperature and supply voltage dependences of a bandgap reference (BGR) circuit first published by Gilbert (1996) and implemented in IBM's SiGe BiCMOS process agree well with model predictions. The plot of VBGR against temperature exhibits less curvature than predicted elsewhere for SiGe BGRs

Published in:

Electronics Letters  (Volume:34 ,  Issue: 15 )