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Optoelectronic characteristics of a-SiC:H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si:H

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6 Author(s)
Yen-Ann Chen ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Yung-Hung Wu ; Wen-Chin Tsay ; Li-Hong Laih
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To improve the electroluminescence (EL) properties of the a-SiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency. A thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p+-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300 cd/m2 at an injection current density of 600 mA/cm2, and its EL threshold voltage was 14 V

Published in:

Electronics Letters  (Volume:34 ,  Issue: 14 )

Date of Publication:

9 Jul 1998

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