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1.3 μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer

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7 Author(s)
Iwai, N. ; R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Mukaihara, T. ; Itoh, M. ; Yamanaka, N.
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The authors have fabricated a 1.3 μm GaInAsP strained-layer QW (Al-oxide confined inner stripe) laser on a p-InP substrate using an AlInAs-oxide layer for the first time. A low threshold current of 6.8 mA, a high slope efficiency of 0.55 W/A and single lateral mode operation were obtained. Both low threshold and single lateral mode operations indicate that real-index inner stripe structure could be realised using AlInAs-oxide

Published in:

Electronics Letters  (Volume:34 ,  Issue: 14 )

Date of Publication:

9 Jul 1998

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