A continuous-wave regime, lasing near 2.2 μm, has been achieved for single longitudinal mode GaInAsSb double heterostructure lasers mounted on a Peltier cooler. In the pulsed regime the lasers exhibited a characteristic temperature of the threshold current as high as 132 K at heatsink temperatures up to 60°C
Published in:
Electronics Letters
(Volume:34
,
Issue:
14
)
Date of Publication: 9 Jul 1998