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A new power MOSFET model including the variation of parameters with the temperature

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5 Author(s)
Leonardi, C. ; Dept. of Electr., Electron. & Syst. Eng., Catania Univ., Italy ; Raciti, A. ; Frisina, F. ; Letor, R.
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A new PSpice model of power MOSFETs has been recently developed aiming to account for the parameter variations with temperature. The present paper discusses the new model in detail and reports static and dynamic validation tests at different working temperatures in the range 25-150°C on actual devices. Finally, the model is tested in applications where the power devices are connected in parallel or in series, in order to carry out specific information during critical behavior such as turn-on and turn-off transients

Published in:

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Date of Conference:

2-4 Mar 1998