Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy

We studied the effects of a composition-changing emission region on the emission spectrum using an InGaAsP multiple-quantum-well edge-emitting light-emitting diode (ELED). The ELED was fabricated by selective-area growth using a gradually changing mask stripe width. The spectral half-width exceeded 120 nm at an ambient temperature of 25/spl deg/C, offering a wider spectrum than that of conventional light-emitting diodes.