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Two-step planarized Al-Cu PVD process using long throw sputtering technology

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9 Author(s)
Tzu-Kun Ku ; Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Chen, H.-C. ; Mizusawa, Y. ; Motegi, N.
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In this paper, comprehensive studies on planarized Al alloy interconnect and contact plug technology using long-throw-sputtering (LTS) and two-step cold/hot Al flow technologies are presented. Experimental results demonstrate that LTS-based cold/hot Al PVD technology is capable of completely filling contact holes as small as 0.3 μm and simultaneously planarizing the Al wiring at process temperatures as low as 420°C. The wider process window and excellent Al(111) preferred texture suggest that this technology is an attractive alternative to conventional W/Al interconnect metallization

Published in:

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Date of Conference:

1-3 Jun 1998