Chemical vapor deposition and physical vapor deposition of metal/barrier binary stacks on polytetrafluoroethylene low-k dielectric

Metal/barrier binary stacks have been deposited in situ on polytetrafluoroethylene (PTFE) films. The metals consist of chemical vapor deposited copper and aluminum. The barriers consist of chemical vapor deposited titanium nitride for Al, and physical vapor deposited titanium nitride and tantalum nitride for Cu. Surface and elemental analysis reveal compositionally pure metals and barriers, showing virtually no fluorine contamination in as-deposited barriers or metals. Preliminary thermal annealing studies indicate titanium nitride (for Al) is an effective barrier against thermally driven fluorine diffusion from PTFE