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A fully integrated 1.9-GHz CMOS low-noise amplifier

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7 Author(s)
Cheon Soo Kim ; Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Min Park ; Chung-Hwan Kim ; Yeong Cheol Hyeon
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A fully integrated 1.9 GHz CMOS low-noise amplifer (LNA) has been implemented in a 0.8 μm CMOS technology. For low-noise performance, the amplifier employs high-quality spiral inductors with a duality factor of 8.5-12.5, and device layout and bias condition of the active devices were optimized for low-noise conditions. This amplifier showed a noise figure of 2.8 dB with a forward gain of 15 dB at current consumption of 15 mA. To the authors' knowledge, this represents the lowest noise figure reported to date for a fully integrated CMOS LNA operating at 1.9 GHz.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:8 ,  Issue: 8 )