By Topic

Novel SiC/Si heterostructure negative-differential-resistance diode for use as switch with high on/off current ratio and low power dissipation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kuen-Hsien Wu ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yean-Kuen Fang ; Jyh-Jier Ho ; Wen-Tse Hsieh
more authors

A novel p-SiC/n-Si heterostructure negative-differential-resistance (NDR) diode with special current-voltage (I-V) characteristics is reported. Under reverse biases, the I-V curve of this device possesses an N-shaped NDR with a high peak-to-valley current ratio (PVCR) and a broad high-impedance valley region. For use as a switch, it can easily achieve a very low off-state current and a high on/off current ratio, as compared to the conventional N-shaped NDR devices. Hence, performance with a more effective switching action and lower power dissipation can be expected. Furthermore, obvious NDR's can even be obtained at a temperature up to 300/spl deg/C, indicating this device is also potential for high-temperature applications.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 8 )