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Injection currents analysis of p+/n-buffer junction

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1 Author(s)
Sang-Koo Chung ; Sch. of Electr. & Electron. Eng., Ajou Univ., Suwon, South Korea

Injection currents analysis of p+/n buffer junction is presented, taking into account the variation of the carrier lifetime with injection level which allows a unified interpretation of the junction current for all injection levels. The injected carrier density and injection efficiency of the anode are calculated as a function of the current density with the low level lifetime as a parameter for different doping levels of the buffer layer. The analytical results agree well with simulations

Published in:

IEEE Transactions on Electron Devices  (Volume:45 ,  Issue: 8 )