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Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET's

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6 Author(s)
Hurt, M.J. ; Adv. Device Technol. Inc., Charlottesville, VA, USA ; Meneghesso, G. ; Zanoni, E. ; Peatman, W.C.B.
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We report the breakdown behavior of the two-dimensional (2-D) MESFET, which is a low-power heterodimensional transistor having dual side gates that contact the edge of the two-dimensional electron gas (2-DEG) channel in a double-side planar-doped pseudomorphic Al0.24 Ga0.76As/In0.17Ga0.83As material structure. Low output conductance (less than 6 mS/mm for VGS=0 V) and low gate leakage current (less than 100 nA) are measured out to a drain-source bias of 20 V, indicating that the effects of impact ionization are reduced in the 2-D MESFET. Excellent off-state drain-source and drain-gate breakdown voltages are experimentally measured to be 20 and 21 V, respectively. We attribute these high breakdown values to the electric and geometric properties of the heterodimensional Schottky metal/2-DEG junction

Published in:

Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 8 )

Date of Publication:

Aug 1998

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